M. Eizenberg, M. Heiblum, et al.
Journal of Applied Physics
The minimum epitaxial layer thickness required to produce relaxed, thermally stable, Si0.7Ge0.3 buffer layer structures for high electron- and hole-mobility devices has been determined, using high resolution x-ray diffraction. A 1.4-μm-thick layer, step graded to x=0.35, is sufficiently thick so that the residual strain in a uniform composition Si 0.33Ge0.67 layer grown on top of it is essentially independent of thickness or growth temperature of the layer. Such structures are stable when annealed at 750°C.© 1995 American Institute of Physics.
M. Eizenberg, M. Heiblum, et al.
Journal of Applied Physics
J. Liu, W.X. Gao, et al.
Physical Review B
G.M. Cohen, P.M. Mooney, et al.
MRS Proceedings 2003
P.M. Mooney, T.A. Kennedy
Journal of Physics C: Solid State Physics