S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Atomic force microscopy is used to measure surface morphology of modulation doped Si/SiGe heterostructures. Three components in the surface roughness are observed: μm-scale roughness arising from misfit dislocations formed to relieve strain, 1000-angstrom-scale roughness believed to be associated with three-dimensional growth of the electron or hole channel layers, and atomic-scale roughness with wavelengths of 10-100 angstrom. Detailed Fourier spectra of the roughness are obtained and used as input to a scattering computation for determining mobility. The results are compared with other mobility-limiting mechanisms, including scattering from ionized impurities and from dislocations.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering