Robert W. Keyes
Physical Review B
Atomic force microscopy is used to measure surface morphology of modulation doped Si/SiGe heterostructures. Three components in the surface roughness are observed: μm-scale roughness arising from misfit dislocations formed to relieve strain, 1000-angstrom-scale roughness believed to be associated with three-dimensional growth of the electron or hole channel layers, and atomic-scale roughness with wavelengths of 10-100 angstrom. Detailed Fourier spectra of the roughness are obtained and used as input to a scattering computation for determining mobility. The results are compared with other mobility-limiting mechanisms, including scattering from ionized impurities and from dislocations.
Robert W. Keyes
Physical Review B
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
A. Reisman, M. Berkenblit, et al.
JES
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989