Resistive intermediate state for thin superconductive films of tin

Abstract

An experimental study of the resistive transition state of vacuum-deposited films of tin has been performed in the temperature range extending from 3.7° to 2.0°K for various values of normally applied magnetic field H. In general, the relationship between the current through the film I and the voltage drop across the film V is not linear. However, over a broad range of the variables T, H, and I, the voltage drop V can be expressed in terms of the voltage drop which occurs when the sample is completely normal Vn V=Vn1-exp-a[H-b(Tc-T)]Tc-T; for T<T c, b(Tc-T)<H, where Tc is the zero-field transition temperature. The constants have been found to be: a=0.12°K/G and b=64 G/°K. © 1965 The American Institute of Physics.