Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Uniaxial stress along [111] has been used to vary the different mechanisms contributing to resonance Raman scattering from allowed TO phonons in the region of the E1 gap in InAs. The significant stress-induced splittings and changes in the resonance Raman line shape of the spectral distribution that have been observed are accounted for by a recent model based on phonon modulation of both the energy gap and wave functions. These results provide a strong confirmation of this model. © 1974 The American Physical Society.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000