Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
By means of hydrostatic pressure, the bottom of the conduction band of GaSb can be displaced from the point in the Brillouin zone to the L point. We have used this effect to control the nature of the electrons (or L) available for tunneling at the electrodes of GaSb-AlSb-GaSb-AlSb-GaSb double-barrier heterostructures. In a structure grown along the (100) direction, we have observed negative differential resistance features due to resonant tunneling through two different paths: from the valley in the electrodes through the first quantized state in the well and from the L valley in the electrodes through the first and second L states in the well. In a structure grown along the (111) direction, only resonant tunneling via the path has been observed. © 1995 The American Physical Society.