P.C. Pattnaik, D.M. Newns
Physical Review B
Scanning Tunneling Microscopy (STM) on boron-doped, p-type Si(111) confirmed the main structural features of the 7 × 7 reconstruction of nearly intrinsic n-type material, in particular the three-fold rotational symmetry. In the p-doped material, one distinct maximum is absent in about every fifth cell. This is attributed to a surface-boron dopant, implying an appreciable surface segregation of boron. © 1985.
P.C. Pattnaik, D.M. Newns
Physical Review B
R. Ghez, J.S. Lew
Journal of Crystal Growth
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Macromolecules
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MRS Spring Meeting 1999