William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Scanning Tunneling Microscopy (STM) on boron-doped, p-type Si(111) confirmed the main structural features of the 7 × 7 reconstruction of nearly intrinsic n-type material, in particular the three-fold rotational symmetry. In the p-doped material, one distinct maximum is absent in about every fifth cell. This is attributed to a surface-boron dopant, implying an appreciable surface segregation of boron. © 1985.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
R. Ghez, J.S. Lew
Journal of Crystal Growth
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures