S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Reactive ion etching always causes a dynamic radiation effect to crystalline silicon, because of an energetic particle bombardment. RIE induced radiation effects are mostly confined to the near surface within a projected range of impinging ions, but point defects, which are highly mobile at room temperatures, can migrate further into the bulk before a damaged surface layer is etched away. Competition between etch rates and damage rates ultimately determines a degree of the RIE damage residue: the slower the etch rate, the heavier the damage may be accumulated at the near surface, eventually leading to amorphization of the surface region. Also, a removal of the surface layer due to etching or sputtering enhances a chemical reaction between a bare surface and incoming radicals. This easily forms a foreign material on the surface which gives rise to a serious contamination problem. A post-cleaning at a low temperature is highly desirable whenever the surface of active devices must be exposed to reactive plasmas. © 1989, Taylor & Francis Group, LLC. All rights reserved.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, M.B. Small
JES
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films