Roughness analysis of Si1-xGex films
R.M. Feenstra, M.A. Lutz, et al.
MRS Fall Meeting 1994
We have determined the atomic structure of the Si(111)-(7× 7)Co surface using scanning tunneling microscopy and ion scattering. The unit cell contains one surface substitutional cobalt atom centered under a six silicon adatom cluster. High-temperature annealing produces a low density lattice gas of these ringlike clusters, giving rise to an impurity stabilized 1×1 structure. They occur for several other transition metals, suggesting a stable, universal, silicide related structure. © 1992 The American Physical Society.
R.M. Feenstra, M.A. Lutz, et al.
MRS Fall Meeting 1994
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VLSI Technology 2004
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting
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