Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001)) surface are highly reactive, thus enabling site-selective absorption of atoms and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001) surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001). The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration. © 2013 American Chemical Society.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Robert W. Keyes
Physical Review B
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001