Conference paper
Probing the limits of silicon-based nanoelectronics
S.J. Wind, Y. Taur, et al.
MRS Spring Meeting 1995
A near-field capacitance microscope has been demonstrated on a 25 nm scale. A resonant circuit provides the means for sensing the capacitance variations between a sub-100-nm tip and surface with a sensitivity of 1×10 -19 F in a 1 kHz bandwidth. Feedback control is used to scan the tip at constant gap across a sample, providing a means of noncontact surface profiling. Images of conducting and nonconducting structures are presented.
S.J. Wind, Y. Taur, et al.
MRS Spring Meeting 1995
K. Ismail, B.S. Meyerson, et al.
IEEE Electron Device Letters
O.C. Wells, S. Rishton
MSA Annual Meeting 1994
B.D. Terris, S. Rishton, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures