G. Arjavalingam, Y. Pastol, et al.
CLEO 1989
Cross-sectional scanning tunneling microscopy and spectroscopy were used to study a modulation-doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band-edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.
G. Arjavalingam, Y. Pastol, et al.
CLEO 1989
E.T. Yu, M. Johnson, et al.
Journal of Crystal Growth
D. Grischkowsky, C.C. Chi, et al.
TMPEO 1986
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986