Vertical channel devices enabled by through silicon via (TSV) technologies
- C. Kothandaraman
- Sami Rosenblatt
- et al.
- 2016
- IEDM 2016
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124 results for Subramanian S. Iyer
3Di DC-DC Buck Micro Converter with TSVs, Grind Side Inductors, and Deep Trench Decoupling Capacitors in 32nm SOI CMOS
- J. Safran
- Giri N. K. Rangan
- et al.
- 2016
- ECTC 2016
An enhanced thermo-compression bonding process to address warpage in 3D integration of large die on organic substrates
- Katsuyuki Sakuma
- Krishna Tunga
- et al.
- 2015
- ECTC 2015
0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
- C. Pei
- G. Wang
- et al.
- 2014
- IEDM 2014
1GHz fully pipelined 3.7ns Address access time 8kx1024 embedded DRAM macro
- O. Takahashi
- S. Dhong
- et al.
- 2000
- ISSCC 2000
AC characterization and modelling of the GexSi1-x/Si BICFET
- M.E. Mierzwinski
- J.D. Plummer
- et al.
- 1992
- IEDM 1992
A high-speed silicon metal-semiconductor-metal photodetector fully integrable with (Bi)CMOS circuits
- E. Bassous
- M. Scheuermann
- et al.
- 1991
- IEDM 1991
Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation
- V.P. Kesan
- S. Subbana
- et al.
- 1991
- IEDM 1991
Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for long wavelength applications
- V.P. Kesan
- P.G. May
- et al.
- 1990
- IEDM 1990