Ronald Troutman
Synthetic Metals
Cross-sectional scanning tunneling microscopy (STM) is used to characterize InAs/GaSb superlattices, grown by molecular beam epitaxy (MBE). Previous STM studies have found an interface asymmetry, with the interfaces of InAs grown on GaSb being rougher than those of GaSb on InAs. In the present work, a comparison is made between samples grown under various conditions, using elevated growth temperature or using atomic layer epitaxy (ALE). In both cases, the interface asymmetry is found to decrease compared to MBE growth at 380°C. In addition, Sb incorporation in the InAs layers is observed directly in the STM images. It is argued that the additional roughness seen at the InAs on GaSb interfaces arises in part from incorporation of excess Sb into the growing InAs layers. Elevated temperatures reduces this incorporation, and hence produces smoother interfaces. © 1994 Academic Press. All rights reserved.
Ronald Troutman
Synthetic Metals
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Kigook Song, Robert D. Miller, et al.
Macromolecules
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering