E.I. Alessandrini, D.R. Campbell, et al.
Journal of Applied Physics
Paper
Schottky barrier of nonuniform contacts to n-type and p-type silicon
Abstract
A current-voltage measurement and thermionic emission theory have been applied to discrete parallel diodes (nonuniform diodes) with the unusual result that the sum of the apparent Schottky barriers to n Si and p Si is not equal to the band gap of Si.
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