Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
The carrier density dependence of the hot-carrier energy relaxation rate in highly photoexcited semiconductors is investigated. Results of these calculations indicate important differences between polar direct-gap and nonpolar indirect-gap materials. The critical carrier density (Nc) for the onset of screening in polar semiconductors is found to increase with both effective mass and phonon energy. A method for predicting trends among these materials with respect to Nc is briefly described. Calculations for GaAs predict that the hot-carrier cooling rate begins to decrease at Nc 6×1016 cm-3. Above this density the phonon emission frequency falls rapidly. In contrast, the effects of screening in Si are shown to be negligible for N1019 cm-3. In this case, a significant reduction in the energy relaxation rate does not occur until N1021 cm-3. © 1981 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R. Ghez, M.B. Small
JES
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids