PaperGaAs lnjection laser with novel mode control and switching propertiesMarshall I. Nathan, J.C. Marinace, et al.Journal of Applied Physics
PaperTime dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealingMarshall I. Nathan, R.T. Hodgson, et al.Applied Physics Letters
PaperStimulated emission of radiation from GaAs p-n junctionsMarshall I. Nathan, William P. Dumke, et al.Applied Physics Letters