L. Esaki, L.L. Chang
Physical Review Letters
Paper
Semiconductor superlattices by MBE and their characterization
Abstract
The deposition of semiconductor superlattices of GaAs-Ga1-x AlxAs and In1-xGaxAs-GaSb1-yAsy by molecular beam epitaxy is described. Their evaluations by high-energy electron diffraction and X-ray measurement are presented. Properties obtained from transport, optical and magneto experiments are summarized to characterize the electronic subband structure. © 1981.
Related
L. Esaki, P.J. Stiles
Physical Review Letters
H. Munekata, H. Ohno, et al.
Physical Review Letters
P.A. Snow, D.J. Westland, et al.
Superlattices and Microstructures