The DX centre
T.N. Morgan
Semiconductor Science and Technology
Block copolymers can self-assemble to generate patterns with nanoscale periodicity, which may be useful in lithographic applications. Block copolymers in which one block is organic and the other contains Si are appealing for self-assembled lithography because of the high etch contrast between the blocks, the high etch resistance of the Si-containing block, and the high Flory-Huggins interaction parameter, which is expected to minimize line edge roughness. The locations and long range order of the microdomains can be controlled using shallow topographical features. Pattern generation from poly(styrene)- poly(ferrocenyldimethylsilane) and poly(styrene)-poly(dimethylsiloxane) block copolymers, and the subsequent pattern transfer into metal, oxide, and polymer films, is described. © 2008 American Vacuum Society.
T.N. Morgan
Semiconductor Science and Technology
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures