A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Paper
Silicide Schottky barriers: An elemental description
Abstract
A model for reactive Schottky barrier formation is proposed and applied to silicide contacts on silicon. Approximate workfunctions calculated assuming a silicon excess near the silicide/silicon interface reconcile measured barrier heights with a simple Schottky description of their energetics. © 1980.
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