Silicon nanowire atomic force microscopy probes for high aspect ratio geometries

Using site controlled growth of single vapor-liquid-solid silicon nanowires high aspect ratio atomic force microscope probes are fabricated on a wafer scale. Nanowire probe aspect ratios as high as 90 are demonstrated. Probe performance and limitations are explored by imaging high aspect ratio etched silicon structures using atomic force microscopy. Silicon nanowire probes are an ideal platform for non-destructive topographic imaging of high aspect ratio features. © 2012 American Institute of Physics.