Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment

Abstract

Two-dimensional Ge n-channel DGFETs with LG = 7.5 nm and t Ge = 2 nm are simulated in the ballistic limit. The best intrinsic switching performance is found for [110]/[4421] transport/quantization alignments, and is 13% better than Ge [110]/[110] and 23% better than Si [100]/[001] or [110]/[001]. ©2004 IEEE.