P. Solomon, D.J. Dimaria
Journal of Applied Physics
The mobility of holes in Si inversion layers for different crystal orientation was studied using a six-band k·p model. Compressive or tensile strain applied to the channel, varying thickness of the silicon layer were also investigated. It was found that compressive and tensile strain enhance the mobility.
P. Solomon, D.J. Dimaria
Journal of Applied Physics
P. Solomon
DRC 2001
N. Sano, M.V. Fischetti, et al.
IWCE 1998
B. Laikhtman, P. Solomon
Journal of Applied Physics