Reliability of ultra-thin oxides in CMOS circuits
J.H. Stathis, B.P. Linder, et al.
Microelectronics Reliability
The post breakdown I-V characteristics of ultra-thin gate oxides subjected to constant voltage Fowler-Nordheim stress in nMOSFETs were investigated. It is shown that by varying the electron density through the application of a substrate bias under the same stress field conditions, the oxide degradation does not change while the oxide I-V characteristics after the breakdown event are strongly modified. We have also studied the dependence of the post-breakdown I-V curve on the current compliance used during the constant voltage stress. Finally we speculate on the physical structure of the breakdown spot on the basis of the experimental observations.
J.H. Stathis, B.P. Linder, et al.
Microelectronics Reliability
E. Cartier, J.H. Stathis, et al.
Applied Physics Letters
G.V. Gadiyak, J.H. Stathis
Semiconductors
J.H. Stathis, R. Rodríguez, et al.
Microelectronics Reliability