Conference paperModeling and experimental verification of the effect of gate oxide breakdown on CMOS invertersR. Rodríguez, J.H. Stathis, et al.IRPS 2003
PaperTime-resolved photoluminescence in amorphous silicon dioxideJ.H. Stathis, M.A. KastnerPhysical Review B
Conference paperA comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gatesS. Zafar, Y.-H. Kim, et al.VLSI Technology 2006
PaperInterface defects of ultrathin rapid-thermal oxide on siliconJ.H. Stathis, D.A. Buchanan, et al.Applied Physics Letters