Conference paper
Circuit implications of gate oxide breakdown
J.H. Stathis, R. Rodríguez, et al.
Microelectronics Reliability
The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).
J.H. Stathis, R. Rodríguez, et al.
Microelectronics Reliability
Y. Roh, L.P. Trombetta, et al.
Microelectronic Engineering
B.P. Linder, J.H. Stathis
INFOS 2003
W.L. Warren, P. Lenahan, et al.
Applied Physics Letters