William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Gallium and indium have been found to dissolve ZnSe and ZnTe to appreciable extents at elevated temperatures. T-X phase diagrams were determined which indicate a simple binary system behavior. II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element. © 1966.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Hiroshi Ito, Reinhold Schwalm
JES
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000