H.J. Hovel, R.T. Hodgson, et al.
Solar Energy Materials
Radiotracer techniques have been used to show that Zn diffusion into an originally uniformly Mn-doped GaAs wafer produces marked changes in the Mn concentration profile, resulting in a large minimum behind and a small minimum ahead of the Zn diffusion front. A model which assumes that Mn is an amphoteric impurity in GaAs is proposed to explain these changes. © 1966 The American Institute of Physics.
H.J. Hovel, R.T. Hodgson, et al.
Solar Energy Materials
R.E. Viturrc, C. Mailhiot, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
M. Zelikson, K. Weiser, et al.
Journal of Non-Crystalline Solids
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Physical Review B