X. Yin, H.-M. Chen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Some effects of Zn diffusion on Mn-doped GaAs
Abstract
Radiotracer techniques have been used to show that Zn diffusion into an originally uniformly Mn-doped GaAs wafer produces marked changes in the Mn concentration profile, resulting in a large minimum behind and a small minimum ahead of the Zn diffusion front. A model which assumes that Mn is an amphoteric impurity in GaAs is proposed to explain these changes. © 1966 The American Institute of Physics.