M.O. Aboelfotoh, C.L. Lin, et al.
Applied Physics Letters
Radiotracer techniques have been used to show that Zn diffusion into an originally uniformly Mn-doped GaAs wafer produces marked changes in the Mn concentration profile, resulting in a large minimum behind and a small minimum ahead of the Zn diffusion front. A model which assumes that Mn is an amphoteric impurity in GaAs is proposed to explain these changes. © 1966 The American Institute of Physics.
M.O. Aboelfotoh, C.L. Lin, et al.
Applied Physics Letters
K. Weiser, R.J. Gambino, et al.
Applied Physics Letters
X. Yin, H.-M. Chen, et al.
Applied Physics Letters
J. Freeouf, T.N. Jackson, et al.
Applied Physics Letters