Paper
GaAs sees the light
J. Woodall, Alan C. Warren, et al.
IEEE T-ED
Radiotracer techniques have been used to show that Zn diffusion into an originally uniformly Mn-doped GaAs wafer produces marked changes in the Mn concentration profile, resulting in a large minimum behind and a small minimum ahead of the Zn diffusion front. A model which assumes that Mn is an amphoteric impurity in GaAs is proposed to explain these changes. © 1966 The American Institute of Physics.
J. Woodall, Alan C. Warren, et al.
IEEE T-ED
Y.S. Huang, H. Qiang, et al.
Journal of Applied Physics
R.F. Peart, J. Askill
physica status solidi (b)
R.M. Feenstra, E.T. Yu, et al.
Applied Physics Letters