Conference paper
203 μa threshold current strained V-groove lasers
S. Tiwari, G.D. Pettit, et al.
IEDM 1992
Spectroscopic ellipsometry of epitaxial Ge in bulk Si(100) has been used to study the effects of strain and layer thickness on the Ge-derived E1 transitions. Although a 4-AI-Ge layer exhibits no Ge-like E1 structure, localized E1-like transitions are observed for 7-AI-Ge layers showing the E1 transition is a robust probe of the Ge-like behavior in ultrathin layers. © 1990 The American Physical Society.
S. Tiwari, G.D. Pettit, et al.
IEDM 1992
J.C. Tsang, Y. Yokota, et al.
Applied Physics Letters
F. Legoues
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
A.R. Powell, F. Legoues, et al.
Applied Physics Letters