A.K. Geim, S.J. Bending, et al.
Applied Physics Letters
2-stream interaction between an active GaAs diode and a passive biased semiconductor is shown to reduce the growth rate of a space-charge wave by a factor proportional to the difference of carrier drift velocities in the two interacting semiconductors. This mechanism offers a possible way for stabilising Gunn oscillators with large n0L products. © 1970, The Institution of Electrical Engineers. All rights reserved.
A.K. Geim, S.J. Bending, et al.
Applied Physics Letters
R.F. Broom, P. Gueret, et al.
ISSCC 1978
P. Gueret, U. Kaufmann, et al.
Electronics Letters
P. Gueret, N. Blanc, et al.
Semiconductor Science and Technology