J.B. Kuang, Hung Ngo, et al.
ICCD 2005
Films of WSi2 initially deposited in an amorphous form have been known to display an unexpected resistivity maximum when annealed at a temperature corresponding to the transition from the low-temperature hexagonal structure to the high-temperature tetragonal structure. It is shown that the resistivity maximum is due to an extremely high (5×106/cm) density of stacking faults. Thus, at least one of the scattering defects which contribute to the relatively high resistivity of WSi2 films has been identified.
J.B. Kuang, Hung Ngo, et al.
ICCD 2005
D. Celo, R.V. Joshi, et al.
AMC 2003
R.M. Feenstra, M.A. Lutz, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R.V. Joshi, W. Hwang, et al.
GLSVLSI 2001