Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A new analysis is presented to describe the weak linear temperature dependence of the stress observed from 293 to 550 K in B-doped silicon membranes supported by silicon substrates. In contrast to a previous treatment, where consideration was given only to the existence of a differential thermal expansion coefficient △ α, the present treatment also takes into account the temperature dependence of the elastic modulus of the membrane, an effect which cannot be neglected when △α is very small. It is now concluded that boron doping to a nominal level of 1020atoms/cm3increases the expansion coefficient of Si over the range 293–550 K by 1.1X 10-8 K, an increment only one-half as large as that previously reported. In addition, the {100} biaxial elastic modulus of the membrane B is deduced to have a temperature coefficient (1 /Bo) dB /dTof — 3.7 X 10 -5/K. The value of the present analysis in avoiding other misinterpretation of the experimental results is pointed out. © 1991, American Vacuum Society. All rights reserved.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
David B. Mitzi
Journal of Materials Chemistry
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001