Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Several experiments have found that Ge initially grows layer by layer on the Si(100)2×1 surface, up to a thickness of 3 atomic layers. Further growth occurs via islands. Here, model calculations show that layer-by-layer growth is stabilized for up to 3 layers because it reduces the strain energy associated with the surface dimerization. © 1991 The American Physical Society.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989