Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A strong blue shift (up to 40 meV) with increasing laser power is observed in the luminescence from the transition between the conduction subband at the X minimum in AlAs and the valence subband at Γ maximum in GaAlAs. This shift is explained by the band bending due to the spatial separation of the photoexcited electrons and holes. The observed energy shift with laser power is related to the calculated shift with excited carrier density and, in this way, the excess carrier lifetime is determined. © 1990.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
David B. Mitzi
Journal of Materials Chemistry
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
T.N. Morgan
Semiconductor Science and Technology