Present status and future directions of SiGe HBT technology
Marwan H. Khater, Thomas N. Adam, et al.
LEC 2006
The current level in the modern high-speed SiGe heterojunction bipolar transistors (HBTs) continues to increase for operation speed enhancement, but the resultant self-heating and elevated junction temperature emerge as a growing concern for device reliability as well as performance. To address such thermal issues, the optimization of SiGe HBT structures to achieve simultaneous improvements in thermal and electrical performance is carried out in this study. As a foundation for the study, an Rth measurement method and a geometry-based fast analytic thermal model were first developed for trench-isolated SiGe HBTs. Based on the method and model, a set of device design points for lowered Rth without compromising the RF performance have been successfully proposed and experimentally verified on IBM's 200-GHz SiGe HBTs. The details of the proposed structures and acquired results will be described in detail in the paper. The results obtained in this study shed a light on the possibility of the simultaneous optimization of thermal and electrical performance of SiGe HBTs. © 2005 IEEE.
Marwan H. Khater, Thomas N. Adam, et al.
LEC 2006
Daeik Kim, Jonghae Kim, et al.
IEEE Electron Device Letters
Seshadri Subbanna, Gregory Freeman, et al.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Jae-Sung Rieh, Marwan Khater, et al.
IEEE Transactions on Electron Devices