R.M. Tromp
ICPS Physics of Semiconductors 1984
Silicon surfaces which had been exposed to a CF4 /H2 plasma have been characterized by x-ray photoelectron spectroscopy, ellipsometry, He ion channeling, and H profiling techniques. Plasma exposure leads to the deposition of a thin (∼30 Å thick) C,F-polymeric layer. Hydrogen and/or damage (displaced Si atoms) can be detected in the near-surface region up to a depth in excess of 400 Å from the Si surface.
R.M. Tromp
ICPS Physics of Semiconductors 1984
R.M. Tromp, W. Theis, et al.
Physical Review Letters
A. Henry, O.O. Awadelkarim, et al.
Journal of Applied Physics
J.E. Demuth, R.J. Hamers, et al.
JVSTA