Yassir Madhour, Thomas Brunschwiler, et al.
ICEPT 2012
A thin amorphous silicon interlayer, inserted between the III-V semiconductor and the gate dielectric is expected to prevent III-V oxidation, as required for high-mobility channel transistors. We demonstrate that the addition of a thin Al2O3 barrier layer between the a-Si and the high-k HfO2, together with optimized post-metallization annealing, is the key to reduce the a-Si consumption and to achieve a highly scaled gate stack with equivalent oxide thickness of ∼0.8 nm. The evolution of the interfaces during growth and the quality of the stack are investigated by in-situ X-ray photoelectron spectroscopy and electrical measurements on metal-oxide-semiconductors capacitors. © 2011 American Institute of Physics.
Yassir Madhour, Thomas Brunschwiler, et al.
ICEPT 2012
Emanuele Uccelli, Nicolas Daix, et al.
ITNG 2014
S. Beeck, T. Egeler, et al.
ESSDERC 1989
W.C. Tang, H. Rosen, et al.
Applied Physics Letters