First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability
- Felix Eltes
- Jorge Barreto
- et al.
- 2018
- IEDM 2018
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158 results for Jean Fompeyrine
A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform
- Felix Eltes
- Marcel Kroh
- et al.
- 2017
- IEDM 2017
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Integration of GaAs on Ge/Si towers by MOVPE
- A.G. Taboada
- T. Kreiliger
- et al.
- 2013
- MRS Spring Meeting 2013
Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- IEDM 2013
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012
Control of interfacial structure and electrical properties in MBE grown single crystalline SrTiO3 gate dielectrics on Si(100)
- Gerd Norga
- Chiara Marchiori
- et al.
- 2006
- MRS Spring Meeting 2006
Electrochemical modification of La2CuO4: The role played by microstructure
- E.J. Williams
- A. Daridon
- et al.
- 1996
- MRS Fall Meeting 1996
A strong electro-optically active lead-free ferroelectric integrated on silicon
- Stefan Abel
- Thilo Stöferle
- et al.
- 2013
- Nature Communications
Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain
- J.P. Locquet
- J. Perret
- et al.
- 1998
- Nature