Ge-on-insulator lateral bipolar transistors
Jeng-Bang Yau, Joonah Yoon, et al.
BCTM 2016
The modulation of the currents in a symmetric Semiconductor-on-Insulator (SOI) lateral bipolar transistor with a voltage applied to the SOI substrate is studied. For an n-p-n transistor, a positive substrate bias could greatly increase the collector current, especially at low values, while having relatively little effect on the base current. Similarly, a negative substrate bias could greatly increase the collector current of a p-n-p transistor. The physical mechanisms responsible for the modulation effects are discussed. The potential of using substrate bias to enhance the performance of symmetric SOI lateral bipolar circuits is briefly discussed.
Jeng-Bang Yau, Joonah Yoon, et al.
BCTM 2016
Tak H. Ning
ECS Meeting 2007
Eric J. Zhang, Srikanth Srinivasan, et al.
Science Advances
Jin Cai, Amlan Majumdar, et al.
IEDM 2007