A. Gupta, J.Z. Sun, et al.
Science
We report on the preparation of YBCO thin films by single target ion-beam deposition. A YBCO film deposited in-Situ on LaAI03, at a substrate temperature of 675°C and assisted by an atomic oxygen source, had a Tc of 80K. A YBCO film deposited in-Situ on LaAI03, at a substrate temperature of 750°C and assisted by a molecular oxygen source, had a Tcof 83K. A YBCO film deposited on a room temperature MgO substrate and followed by exsitu post annealing had a Tcof 80K. The properties of these films were studied through microscopy, stoichiometry, x-ray diffraction, Auger analysis and Tcmeasurements. © 1991 IEEE
A. Gupta, J.Z. Sun, et al.
Science
L. Civale, T. Worthington, et al.
Physical Review B
F.Y. Yang, C.L. Chien, et al.
Physical Review B - CMMP
S.B. Kaplan, C.C. Chi, et al.
Physical Review B