Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
The surface morphology of cleaved GaAs(110) has been studied by scanning tunneling microscopy. Atomic rows (zigzag chains of alternating Ga and As atoms directed in the [110] direction) are clearly resolved, and structure along the rows is also seen. The surface is observed to have 1×1 periodicity, with an [001] corrugation amplitude in the range 0.20.5 A, and a [110] corrugation amplitude of 0.05 A. Differences between images of n- and p-type GaAs are seen. Surface point defects are observed, consisting typically of 0.7-A-deep depressions along an atomic row. © 1985 The American Physical Society.
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
Robert W. Keyes
Physical Review B
R.W. Gammon, E. Courtens, et al.
Physical Review B
T. Schneider, E. Stoll
Physical Review B