TA-A2 Electrically Alterable Read-only Memory Using Si Rich SiO2 Injectors and a Floating Polycrystalline Silicon Storage Layer

Paper

01 Jan 1980

TA-A2 Electrically Alterable Read-only Memory Using Si Rich SiO₂ Injectors and a Floating Polycrystalline Silicon Storage Layer

No abstract available.

Paper

D.J. DiMaria, D.W. Dong

Journal of Applied Physics

Paper

D.J. Robbins, C. Falcony, et al.

IEEE Electron Device Letters

Paper

D.J. DiMaria, M.V. Fischetti, et al.

Physical Review Letters

Paper

D.J. DiMaria

Applied Physics Letters