Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018 K-1. Postgrowth annealing at 440 K increases the spin signal at low temperatures but the decay rate also increases to 0.030 K-1. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin-transfer efficiency at injection and detection contacts. Surprisingly, the spin-transfer efficiency increases in samples that exhibit minority-spin injection. © 2010 The American Physical Society.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
P. Alnot, D.J. Auerbach, et al.
Surface Science
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Frank Stem
C R C Critical Reviews in Solid State Sciences