L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
The temperature dependence of the magnetization of a light emitting diode having a ferromagnetic contact (spin-LED) is measured from 2 to 300 K in magnetic fields from 30 to 70 kOe and it is found that it originates from the GaAs substrate. The magnetization of GaAs comprises a van Vleck-type paramagnetic contribution to the susceptibility which scales inversely with the band gap of the semiconductor. Thus, the temperature dependence of the band gap of GaAs accounts for the non-linear temperature dependent magnetic susceptibility of GaAs and thus, at large magnetic fields, for the spin-LED. © IOP Publishing Ltd.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Ellen J. Yoffa, David Adler
Physical Review B
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology