Texture and resistivity of dilute binary Cu(Al), Cu(In), Cu(Ti), Cu(Nb), Cu(Ir), and Cu(W) allow thin films

Abstract

The annealing behavior of a group of dilute Cu-alloy films was studied. Pure Cu and dilute binary Cu(Al), Cu(In), Cu(Ti) Cu(Nb), Cu(Ir), and Cu(W) alloy films were electron-beam evaporated at nominally room temperature onto thermally oxidized silicon wafers. For all the films studied, annealing resulted in the lowering of film resistivity and in the strengthening of film texture, and the best combination of strong <111> fiber texture and the lowest postanneal resistivity was observed for Cu(Ti).