R. Ghez, J.S. Lew
Journal of Crystal Growth
PH3is found to chemisorb on Si(100) and the saturation coverage is strongly temperature dependent. Apparently the desorption of the hydrogen at temperatures above 400 °C can open up more Si sites for PH3chemisorption. Both PH3 and phosphorus adsorbed on the Si surface can effectively block the coadsorption of silane molecules. The data is consistent with the observed rapid decrease in Si deposition rate during in situ doping with PH3in a SiH4reactor. © 1984, American Vacuum Society. All rights reserved.
R. Ghez, J.S. Lew
Journal of Crystal Growth
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films