M.I. Nathan, W.P. Dumke, et al.
Applied Physics Letters
We report measurements of the capture barrier for the DX center in Si-doped AlxGa1-xAs as a function of the alloy composition. A model of the capture process which requires a distribution of capture barrier heights has been fit to the data for samples with x=0.35. A simple technique is used to extract the average capture barrier height from data for samples with AlAs mole fraction ranging from x=0.27 to x=0.55. The barrier height varies strongly with the composition and has a minimum at x=0.35. The implications of these results are discussed.
M.I. Nathan, W.P. Dumke, et al.
Applied Physics Letters
H.T. Yang, P.M. Mooney
Journal of Applied Physics
N. Caswell, P.M. Mooney, et al.
Applied Physics Letters
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993