A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The effect of film thickness on the electrical properties of boron-doped LPCVD polysilicon films with doping concentration ranging from 1 x 1017to 1 x 1019cm-3 has been characterized from 1.2 μm down to 0.1 μm. The resistivity increases exponentially as the film thickness decreases, rather than remaining constant, and the rate of increase is a strong function of doping concentration. After a quantitative study on the physical mechanisms which can affect the resistivity as film thickness decreases, the carrier trapping effect due to grain-size variation at different film thicknesses is shown to be the dominant factor. A trapping model without assuming the depletion approximation can explain well the experimental data and enhances understanding of the resistivity behavior as the polysilicon film thickness decreases. © 1984, The Electrochemical Society, Inc. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano