L. Esaki, P.J. Stiles, et al.
Physical Review Letters
Paper
The Germanium Insulated-Gate Field-Effect Transistor (FET)
Abstract
No abstract available.
Related
E. Mendez, L.L. Chang, et al.
Surface Science
L.L. Chang, A. Koma
Applied Physics Letters
P.A. Snow, D.J. Westland, et al.
Superlattices and Microstructures