Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
A comparison study was carried out on the influence of the growth chemistry on the properties of AlxGa1-xAs and GaAs layers and quantum well structures. Triethylgallium, triethylaluminum, trimethylgallium, and trimethylaluminum were used in a various combinations during MOVPE growth of AlxGa1-xAs. Substantial reductions in the carbon incorporation can be achieved using the ethyl based growth chemistry. The observed change in the carbon incorporation with growth chemistry indicates a change in the decomposition kinetics and mechanisms between the various growth precursors. While triethylgallium can be directly substituted for trimethylgallium in the growth of AlxGa1-xAs, the use of triethyl aluminum requires particular care. Narrow quantum well structures were demonstrated using both ethyl and methyl based precursors. © 1986.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
D.J. Wolford, G.D. Gilliland, et al.
Gallium Arsenide and Related Compounds 1991
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology