Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Using time-resolved luminescence we measure the energy relaxation of excitons in thin quantum wells. We find that the excitons relax by losing potential energy in a drift-diffusion motion driven by potential fluctuations in the quantum well plane, which are longer than the coherence length of the excitons. For a constant interface quality the coherence length strongly decreases with decreasing well width so that drift-diffusion dominates the exciton relaxation in thin quantum wells. © 1992.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Peter J. Price
Surface Science
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
E. Burstein
Ferroelectrics