J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Carrier concentration profiles are presented for Si which has been implanted with a low (3 x 1013 em-2), intermediate (3 x 1014 cm-2) or high (8 x 1015 cm-2) dose of 280 keV P31 ions at room temperature and subjected to a 30 min post implantation anneal in the temperature range 550°-850°C. The annealing behavior of these samples is correlated with the amount of damage produced by the room temperature implantation. If a continuous amorphous region is present, ions within this region become electrically active and uncompensated during the epitaxial recrystallization of the layer between 550° and 600°C. These results are generalized to provide a model for the annealing characteristics observed for room temperature and elevated temperature ion implanted Si layers. © 1970, The Electrochemical Society, Inc. All rights reserved.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989